? semiconductor components industries, llc, 2002 april, 2002 rev. 2 1 publication order number: dta114e/d dta114e series preferred devices bias resistor transistor pnp silicon surface mount transistor with monolithic bias resistor network this new series of digital transistors is designed to replace a single device and its external resistor bias network. the brt (bias resistor transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a baseemitter resistor. the brt eliminates these individual components by integrating them into a single device. the use of a brt can reduce both system cost and board space. the device is housed in the to92 package which is designed for through hole applications. maximum ratings (t a = 25 c unless otherwise noted) rating symbol value unit collector-base voltage v cbo 50 vdc collector-emitter voltage v ceo 50 vdc collector current i c 100 madc total power dissipation @ t a = 25 c (1.) derate above 25 c p d 350 2.81 mw mw/ c thermal characteristics characteristic symbol value unit thermal resistance, junction to ambient (surface mounted) r q ja 357 c/w operating and storage temperature range t j , t stg 55 to +150 c maximum temperature for soldering purposes, time in solder bath t l 260 10 c sec device marking and resistor values device marking r1 (k) r2 (k) shipping dta114e dta124e dta144e dta114y dta114t dta143t dtb113e dta123e dta143e dta143z dta114e dta124e dta144e dta114y dta114t dta143t dtb113e dta123e dta143e dta143z 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 10 22 47 47 1.0 2.2 4.7 47 5000/box 1. device mounted on a fr4 glass epoxy printed circuit board using the minimum recommended footprint. case 29 to92 (to226) style 1 preferred devices are recommended choices for future use and best overall value. pnp silicon bias resistor transistor 1 2 3 pin3 collector (output) pin1 emitter (ground) pin2 base (input) r1 r2 http://onsemi.com
dta114e series http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collectorbase cutoff current (v cb = 50 v, i e = 0) i cbo e e 100 nadc collectoremitter cutoff current (v ce = 50 v, i b = 0) i ceo e e 500 nadc emitterbase cutoff current dta114e (v eb = 6.0 v, i c = 0) dta124e dta144e dta114y dta114t dta143t dtb113e dta123e dta143e dta143z i ebo e e e e e e e e e e e e e e e e e e e e 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 madc collectorbase breakdown voltage (i c = 10 m a, i e = 0) v (br)cbo 50 e e vdc collectoremitter breakdown voltage (2.) (i c = 2.0 ma, i b = 0) v (br)ceo 50 e e vdc on characteristics (2.) dc current gain dta114e (v ce = 10 v, i c = 5.0 ma) dta124e dta144e dta114y dta114t dta143t dtb113e dta123e dta143e dta143z h fe 35 60 80 80 160 160 3.0 8.0 15 80 60 100 140 140 250 250 5.0 15 27 140 e e e e e e e e e e collectoremitter saturation voltage (i c = 10 ma, i e = 0.3 ma) dta144e/dta114y (i c = 10 ma, i e = 0.3 ma) dtb113e/dta143e (i c = 10 ma, i b = 5 ma) dta123e (i c = 10 ma, i b = 1 ma) dta114t/dta143t/ (i c = 10 ma, i b = 1 ma) dta143z/dta124e v ce(sat) e e 0.25 vdc output voltage (on) (v cc = 5.0 v, v b = 2.5 v, r l = 1.0 k w ) dta114e dta124e dta114y dta114t dta143t dtb113e dta123e dta143e dta143z (v cc = 5.0 v, v b = 3.5 v, r l = 1.0 k w ) dta144e v ol e e e e e e e e e e e e e e e e e e e e 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 vdc 2. pulse test: pulse width < 300 m s, duty cycle < 2.0%
dta114e series http://onsemi.com 3 electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min typ max unit output voltage (off) (v cc = 5.0 v, v b = 0.5 v, r l = 1.0 k w ) dta114t dta113t dta144e dta114y dta143z (v cc = 5.0 v, v b = 0.05 v, r l = 1.0 k w ) dtb113e (v cc = 5.0 v, v b = 0.25 v, r l = 1.0 k w ) dta114t dta143t dta123e dta143e v oh 4.9 e e vdc input resistor dta114e dta124e dta144e dta114y dta114t dta143t dtb113e dta123e dta143e dta143z r1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 k w resistor ratio dta114e/dta124e/dta144e dta114y dta114t/dta143t dtb113e/dta123e/dta143e dta143z r 1 /r 2 0.8 0.17 e 0.8 0.055 1.0 0.21 e 1.0 0.1 1.2 0.25 e 1.2 0.185
dta114e series http://onsemi.com 4 typical electrical characteristics dta114e 100 10 1 0.1 0.01 0.001 0 v in , input voltage (volts) i c , collector current (ma) t a =-25 c 25 c 12345 6 7 8 9 10 0.01 20 i c , collector current (ma) v ce(sat) , maximum collector voltage (volts) 0.1 1 0 40 60 80 1000 1 10 100 i c , collector current (ma) h fe , dc current gain (normalized) t a =75 c -25 c 100 10 75 c 50 010 20 30 40 4 3 1 2 v r , reverse bias voltage (volts) c ob , capacitance (pf) 0 t a =-25 c 25 c 75 c f = 1 mhz l e = 0 v t a = 25 c v o = 5 v i c /i b =10 v ce = 10 v 0 i c , collector current (ma) 0.1 v in , input voltage (volts) 1 10 100 10 20 30 40 50 t a =-25 c 25 c 75 c v o = 0.2 v figure 1. derating curve 250 200 150 100 50 0 -50 0 50 100 150 t a , ambient temperature ( c) p d , power dissipation (milliwatts) r q ja = 625 c/w figure 2. v ce(sat) versus i c figure 3. dc current gain figure 4. output capacitance figure 5. output current versus input voltage figure 6. input voltage versus output current 25 c
dta114e series http://onsemi.com 5 typical electrical characteristics dta124e figure 7. v ce(sat) versus i c figure 8. dc current gain 1000 10 i c , collector current (ma) h fe , dc current gain (normalized) 100 10 1 100 t a =75 c 25 c -25 c figure 9. output capacitance i c , collector current (ma) 0 10 20 30 t a =-25 c 75 c v in , input voltage (volts) 100 10 1 0.1 40 50 figure 10. output current versus input voltage 100 10 1 0.1 0.01 0.001 0 1 2 3 4 v in , input voltage (volts) 75 c 25 c t a =-25 c i c , collector current (ma) 5 6 7 8 9 10 figure 11. input voltage versus output current 0.01 v ce(sat) , maximum collector voltage (volts) 0.1 1 10 40 i c , collector current (ma) 0 20 60 80 75 c 25 c t a =-25 c 50 010 2030 40 4 3 2 1 0 v r , reverse bias voltage (volts) c ob , capacitance (pf) 25 c f = 1 mhz l e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b =10 v ce = 10 v
dta114e series http://onsemi.com 6 typical electrical characteristics dta144e figure 12. v ce(sat) versus i c 100 10 1 0.1 0 10 20 30 40 i c , collector current (ma) v in , input voltage (volts) t a =-25 c 25 c 75 c 50 figure 13. dc current gain figure 14. output capacitance 100 10 1 0.1 0.01 0.001 010 i c , collector current (ma) 25 c v in , input voltage (volts) -25 c figure 15. output current versus input voltage h fe , current gain (normalized) 1000 100 10 1 10 100 i c , collector current (ma) 25 c -25 c figure 16. input voltage versus output current i c , collector current (ma) 1 0.1 0.01 010203040 75 c 25 c v ce(sat) , maximum collector voltage (volts) 50 010203040 1 0.8 0.6 0.4 0.2 0 v r , reverse bias voltage (volts) c ob , capacitance (pf) 12345 6789 f = 1 mhz l e = 0 v t a = 25 c v o = 5 v v o = 2 v i c /i b =10 t a =75 c t a =75 c t a =-25 c
dta114e series http://onsemi.com 7 typical electrical characteristics dta114y 35 v in , input voltage (volts) 10 1 0.1 01020304050 100 10 1 0246810 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 1015202530 404550 v r , reverse bias voltage (volts) v in , input voltage (volts) i c , collector current (ma) figure 17. v ce(sat) versus i c i c , collector current (ma) 0 20406080 v ce(sat) , maximum collector voltage (volts) figure 18. dc current gain figure 19. output capacitance figure 20. output current versus input voltage c ob , capacitance (pf) figure 21. input voltage versus output current i c , collector current (ma) 1 0.1 0.01 0.001 f = 1 mhz l e = 0 v t a = 25 c load +12 v figure 22. inexpensive, unregulated current source typical application for pnp brts t a =-25 c 75 c 25 c t a =75 c 25 c -25 c v o = 5 v v o = 0.2 v t a =-25 c 25 c 75 c i c /i b =10 h fe , dc current gain (normalized) 1 10 100 i c , collector current (ma) -25 c 25 c t a =75 c v ce = 10 v 180 160 140 120 100 80 60 40 20 0 2 4 6 8 1520405060708090
dta114e series http://onsemi.com 8 package dimensions to92 (to226) case 2911 issue al notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j l b k g h section xx c v d n n xx seating plane dim min max min max millimeters inches a 0.175 0.205 4.45 5.20 b 0.170 0.210 4.32 5.33 c 0.125 0.165 3.18 4.19 d 0.016 0.021 0.407 0.533 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.015 0.020 0.39 0.50 k 0.500 --- 12.70 --- l 0.250 --- 6.35 --- n 0.080 0.105 2.04 2.66 p --- 0.100 --- 2.54 r 0.115 --- 2.93 --- v 0.135 --- 3.43 --- 1 style 1: pin 1. emitter 2. base 3. collector on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indem nify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and re asonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employ er. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. dta114e/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
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